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1/14 september 2005 std1lnk60z-1 STQ1NK60ZR - stn1nk60z n-channel 600v 13 ? 0.8a to-92/ipak/sot-223 zener-protected supermesh?mosfet table 1: general features typical r ds (on) = 13 ? extremely high dv/dt capability esd improved capability 100% avalanche tested new high voltage benchmark gate charge minimized description the supermesh? series is obtained through an extreme optimization of st?s well established strip-based powermesh? layout. in addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. such series complements st full range of high voltage mos - fets including revolutionary mdmesh? products. applications ac adaptors and battery chargers swith mode power supplies (smps) table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss r ds(on) i d pw STQ1NK60ZR std1lnk60z-1 stn1nk60z 600 v 600 v 600 v < 15 ? < 15 ? < 15 ? 0.3 a 0.8 a 0.3 a 3 w 25 w 3.3 w to-92 3 2 1 ipak to-92 (ammopack) 1 2 2 3 sot-223 sales type marking package packaging STQ1NK60ZR q1nk60zr to-92 bulk STQ1NK60ZR-ap q1nk60zr to-92 ammopak std1lnk60z-1 d1lnk60z ipak tube stn1nk60z n1nk60z sot-223 tape & reel rev. 6
std1lnk60z-1 - STQ1NK60ZR - stn1nk60z 2/14 table 3: absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 0.3a, di/dt 200a/s, v dd v (br)dss , t j t jmax. table 4: thermal data (#) when mounted on 1 inch2 fr-4 board, 2 oz cu table 5: avalanche characteristics table 6: gate-source zener diode protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely abs orb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. symbol parameter value unit ipak to-92 sot-223 v ds drain-source voltage (v gs = 0) 600 v v dgr drain-gate voltage (r gs = 20 k ? ) 600 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 0.8 0.3 0.3 a i d drain current (continuous) at t c = 100c 0.5 0.189 0.189 a i dm ( ) drain current (pulsed) 3.2 1.2 1.2 a p tot total dissipation at t c = 25c 25 3 3.3 w derating factor 0.24 0.025 0.026 w/c v esd(g-s) gate source esd(hbm-c=100pf, r=1.5k ?) 800 v dv/dt (1) peak diode recovery voltage slope 4.5 v/ns t j t stg operating junction temperature storage temperature -55 to 150 c ipak to-92 sot-223 rthj-case thermal resistance junction-case max 5 -- -- c/w rthj-amb thermal resistance junction-ambient max 100 120 37.87(#) c/w rthj-lead thermal resistance junction-lead max -- 40 -- c/w t l maximum lead temperature for soldering purpose 275 260 260 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 0.8 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 60 mj symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1ma (open drain) 30 v
3/14 std1lnk60z-1 - STQ1NK60ZR - stn1nk60z electrical characteristics (t case =25c unless otherwise specified) table 7: on /off table 8: dynamic table 9: source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. 3. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs = 10v, i d = 0.4 a 13 15 ? symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = v , i d = 0.4 a 0.5 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 94 17.6 2.8 pf pf pf c oss eq. (3) equivalent output capacitance v gs = 0v, v ds = 0v to 480v 11 pf t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 300v, i d = 0.4 a r g = 4.7 ? v gs = 10 v (see figure 21) 5.5 5 13 28 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480v, i d = 0.8 a, v gs = 10v (see figure 25) 4.9 1 2.7 6.9 nc nc nc symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 0.8 2.4 a a v sd (1) forward on voltage i sd = 0.8a, v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 0.8 a, di/dt = 100a/s v dd = 20v, t j = 25c (see figure 23) 135 216 3.2 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 0.8 a, di/dt = 100a/s v dd = 20v, t j = 150c (see figure 23) 140 224 3.2 ns nc a
std1lnk60z-1 - STQ1NK60ZR - stn1nk60z 4/14 figure 3: safe operating area for ipak figure 4: safe operating area for to-92 figure 5: safe operating area for sot-223 figure 6: thermal impedance for ipak figure 7: thermal impedance for to-92 figure 8: thermal impedance for sot-223
5/14 std1lnk60z-1 - STQ1NK60ZR - stn1nk60z figure 9: output characteristics figure 10: transconductance figure 11: gate charge vs gate-source voltage figure 12: transfer characteristics figure 13: statis drain-source on resistance figure 14: capacitance variation
std1lnk60z-1 - STQ1NK60ZR - stn1nk60z 6/14 figure 15: normalized gate thereshold volt - age vs temperature figure 16: source-drain diode forward char - acteristics figure 17: maximum avalanche energy vs temperature figure 18: normalized on resistance vs tem - perature figure 19: normalized bvdss vs temperature figure 20: max id current vs tc
7/14 std1lnk60z-1 - STQ1NK60ZR - stn1nk60z figure 21: unclamped inductive load test cir - cuit figure 22: switching times test circuit for resistive load figure 23: test circuit for inductive load switching and diode recovery times figure 24: unclamped inductive wafeform figure 25: gate charge test circuit
std1lnk60z-1 - STQ1NK60ZR - stn1nk60z 8/14 in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
9/14 std1lnk60z-1 - STQ1NK60ZR - stn1nk60z dim. mm. inch min. typ max. min. typ. max. a1 4.45 4.95 0.170 0.194 t 3.30 3.94 0.130 0.155 t1 1.6 0.06 t2 2.3 0.09 d 0.41 0.56 0.016 0.022 p0 12.5 12.7 12.9 0.49 0.5 0.51 p2 5.65 6.35 7.05 0.22 0.25 0.27 f1, f2 2.44 2.54 2.94 0.09 0.1 0.11 delta h -2 2 -0.08 0.08 w 17.5 18 19 0.69 0.71 0.74 w0 5.7 6 6.3 0.22 0.23 0.24 w1 8.5 9 9.25 0.33 0.35 0.36 w2 0.5 0.02 h 18.5 20.5 0.72 0.80 h0 15.5 16 16.5 0.61 0.63 0.65 h1 25 0.98 d0 3.8 4 4.2 0.15 0.157 0.16 t0.90.035 l110.43 l1 3 0.11 delta p -1 1 -0.04 0.04 to-92 ammopack
std1lnk60z-1 - STQ1NK60ZR - stn1nk60z 10/14 dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 1 3 = = b3 b b6 b2 e g = = = = b5 2 to-251 (ipak) mechanical data 0068771-e
11/14 std1lnk60z-1 - STQ1NK60ZR - stn1nk60z dim. mm. inch min. typ max. min. typ. max. a 4.32 4.95 0.170 0.194 b 0.36 0.51 0.014 0.020 d 4.45 4.95 0.175 0.194 e 3.30 3.94 0.130 0.155 e 2.41 2.67 0.094 0.105 e1 1.14 1.40 0.044 0.055 l 12.70 15.49 0.50 0.610 r 2.16 2.41 0.085 0.094 s1 0.92 1.52 0.036 0.060 w 0.41 0.56 0.016 0.022 v5 5 to-92 mechanical data
std1lnk60z-1 - STQ1NK60ZR - stn1nk60z 12/14 dim. mm inch min. typ. max. min. typ. max. a 1.80 0.071 b 0.60 0.70 0.80 0.024 0.027 0.031 b1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 d 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 e 3.30 3.50 3.70 0.130 0.138 0.146 h 6.70 7.00 7.30 0.264 0.276 0.287 v10 o 10 o a1 0.02 p008b sot-223 mechanical data
13/14 std1lnk60z-1 - STQ1NK60ZR - stn1nk60z table 10: revision history date revision description of changes 19-mar-2003 1 first release 15-may-2003 2 removed dpak 09-jun-2003 3 final datasheet 17-nov-2004 4 inserted sot-223. 15-feb-2005 5 modified curve 4 07-sep-2005 6 inserted ecopack indication
std1lnk60z-1 - STQ1NK60ZR - stn1nk60z 14/14 i nformation furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the con sequence s o f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. n o license is grante d b y implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicatio n are subjec t t o change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics produ cts are no t a uthorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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